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Among very low disorder systems of condensed matter, the high mobilitytwo-dimensional electron gas confined in gallium arsenide/aluminum galliumarsenide heterostructures holds a privileged position as platform for thediscovery of new electronic states driven by strong Coulomb interactions.Molecular beam epitaxy (MBE), an ultra-high vacuum thin-film depositiontechnique, produces the highest quality 2DEGs and has played a central role ina number of discoveries that have at their root the interplay of reduceddimensionality, strong electron-electron interactions, and disorder. Thisreview attempts to describe the latest developments in heterostructure design,MBE technology, and our evolving understanding of disorder that result inimproved material quality and facilitate discovery of new phenomena at everfiner energy scales.

Molecular Beam Epitaxy of Ultra-High Quality AlGaAs/GaAs Heterostructures: Enabling Physics in Low-Dimensional Electronic Systems