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To engineer strain relaxation of sputtered BST thin films on Pt-Si wafers,homo-buffer layer method was applied to eliminate Pt hillock formation. ThinBST homo-buffer layers were deposited at room temperature and subsequently themain BST layer was deposited at 650{\deg}C, Pt hillock free BST films wereobtained with homo-buffer thickness above 5 nm. Relatively good electricalproperties were obtained for BST thin films with 15 and 25 nm homo-buffer layer(T= 30 % at 5V and tan {\delta}= 0.018).

Influence of homo-buffer layer on stress control of sputtered (Ba0.45,Sr0.55)TiO3 thin films on Pt-Si