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Ultra-thin planar heterostructures of graphene and other two-dimensionalcrystals have recently attracted much interest. Very high carrier mobility in agraphene-on-boron nitride assembly is now well-established, but it has beenanticipated that appropriately designed hybrids could perform other tasks aswell. A heterostructure of graphene and molybdenum disulphide (MoS$_2$) isexpected to be sensitive to photo illumination due to the optical bandgap inMoS$_2$. Despite significant advances in device architectures with bothgraphene and MoS$_2$, binary graphene-MoS$_2$ hybrids have not been realized sofar, and the promising opto-electronic properties of such structures remainelusive. Here we demonstrate experimentally that graphene-on-MoS$_2$ binaryheterostructures display an unexpected and remarkable persistentphotoconductivity under illumination of white light. The photoconductivity cannot only be tuned independently with both light intensity and back gatevoltage, but in response to a suitable combination of light and gate voltagepulses the device functions as a re-writable optoelectronic switch or memory.The persistent, or `ON', state shows virtually no relaxation or decay withinthe the experimental time scales for low and moderate photoexcitationintensity, indicating a near-perfect charge retention. A microscopic modelassociates the persistence with strong localization of carriers in MoS$_2$.These effects are also observable at room temperature, and with chemical vapourdeposited graphene, and hence are naturally scalable for large areaapplications.

A nearly relaxation-free opto-electronic memory from ultra-thin graphene-MoS$_2$ binary hybrids