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The deposition of Al film onto the (111) surface of a p-Si crystal was shownto induce a deformation in the near-surface layer of the latter. Provided thatthe crystal strain is elastic and uniaxial, the gettering of defects in thenear-surface layer is observed, which is confirmed by a change in thedependence of the specimen resistance on the elastic strain magnitude. Themaximum depth of the defect capture has been calculated on the basis of theenergy of interaction between the deformed layer and dislocations.

Electrophysical characteristics of near-surface layers in p-Si crystals with sputtered Al films and subjected to elastic deformation