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New structure data for the high-temperature diluted magnetic semiconductorSi:Mn, synthesized by laser method are presented. The higher resolutiontransmission electron microscopy and diffraction was applied in two crystaldirections of epitaxial layers of DMS Si:Mn with elimination of thecontribution from GaAs substrate and interface. It is established, that the DMSSi:Mn can be represent as compound with variable composition Si2+xMn1-x (0 <x<1), single-phase diamond like structure, high crystal perfection and theself-organized formation of the super-lattice structures with the period equalto triple the distance between the nearest (110) atomic layers and intervalbetween (110) layers which are doped by Mn atoms and orientated along thedirection of Si:Mn film growth. The Si with 15 percent of Mn (or Si2.5Mn0.5)films consist of blocks with the 15-50 nm sizes and with mutually perpendicularorientations of the super-lattice modulations. Atoms of manganese in the (110)layers, doped by these impurity, settle down in the form of strips of anone-atom thickness. These manganese strips in the given (110) layer alternateoccupy about half of area of the layer (110) in the full consent with thespectral X-ray analysis and ferromagnetic resonance data.

Electron microscopy and diffraction study of high-temperature  diamond-like Si-based ferromagnetic with self-organized super-lattice  distribution of Mn impurity