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There are essential achievements in synthesis of interesting for creation ofcompact electronic memory switched by own current structures of spin valves andmagnetic tunnel junctions with hysteretic current dependences of resistance. Inthe offered message the attention to discrepancy to physical principles of ahysteresis of resistance represented in publications is paid. It isschematically presented how the dependences of resistance on current shouldlook not contradicting the energy conservation law for hysteresis dependence ofresistance on current and corresponding volt-ampere characteristic.

Correct nonlinearity and hysteresis of volt-ampere characteristics of spin valves, magnetic tunnel junctions and memristors