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We report on the observation of the reststrahl band assisted photocurrents inepitaxial graphene on SiC excited by infrared radiation. The peculiar spectraldependence for frequencies lying within the reststrahl band of the SiCsubstrate provides a direct and noninvasive way to probe the electric fieldmagnitude at atomic distances from the material's surface. Furthermore ourresults reveal that nonlinear optical and optoelectronic phenomena in 2Dcrystals and other atomic scale structures can be giantly enhanced by a propercombination of the spectral range and substrate material.

Probing of electromagnetic fields on atomic scale by photoelectric phenomena in graphene