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We report our demonstration of Rabi oscillations in Si-SiO2-Alphotoconductive devices with nanosecond laser pulses of a few nJ at roomtemperature without external magnetic fields. Zeeman splitting of spin quantumstates of dopants in silicon is achieved with internal magnetic fields producedby the Al film under excitation of laser pulses. Rabi oscillation frequency is15 MHz and 25 MHz when photocurrent direction is perpendicular and parallel,respectively, to the propagation direction of linearly-polarized, 532-nm, 7-nslaser pulses. Insertion of graphene buffer layer between Al and SiO2 provides athree-fold enhancement in Rabi oscillation amplitude. This simple-structured,low-cost device operated at room temperature should open a new avenue forfuture spin-based electronics and optoelectronics.

Graphene-enhanced, internal-magnetic-field-generated Rabi oscillations in metal-coated Si-SiO2 photoconductive detectors