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High-quality epitaxial SrVO3 (SVO) thin films of various thicknesses weregrown on (001)-oriented LSAT substrates by pulsed electron-beam depositiontechnique. Thick SVO films (~25 nm) exhibited metallic behavior with theelectrical resistivity following the T2 law corresponding to a Fermi liquidsystem. We observed a temperature driven metal-insulator transition (MIT) inSVO ultrathin films with thicknesses below 6.5 nm, the transition temperatureTMIT was found to be at 50 K for the 6.5 nm film, 120 K for the 5.7 nm film and205 K for the 3 nm film. The emergence of the observed MIT can be attributed tothe dimensional crossover from a three-dimensional metal to a two-dimensionalMott insulator, as the resulting reduction in the effective bandwidth W opens aband gap at the Fermi level. The magneto-transport study of the SVO ultrathinfilms also confirmed the observed MIT is due to the electron-electroninteractions other than localization.

Dimensional-Crossover-Driven Mott Insulators in SrVO3 Ultrathin Films