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Quantitative understanding of the relationship between quantum tunneling andFermi surface spin polarization is key to device design using topologicalinsulator surface states. By using spin-resolved photoemission spectroscopywith p-polarized light in topological insulator Bi2Se3 thin films across themetal-to-insulator transition, we observe that for a given film thickness, thespin polarization is large for momenta far from the center of the surfaceBrillouin zone. In addition, the polarization decreases significantly withenhanced tunneling realized systematically in thin insulating films, whereasmagnitude of the polarization saturates to the bulk limit faster at largerwavevectors in thicker metallic films. Our theoretical model calculationscapture this delicate relationship between quantum tunneling and Fermi surfacespin polarization. Our results suggest that the polarization current can betuned to zero in thin insulating films forming the basis for a futurespin-switch nano-device.

Tunneling Tuned Spin Modulations in Ultrathin Topological Insulator Films