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As device miniaturization approaches the atomic limit, it becomes highlydesirable to exploit novel paradigms for tailoring electronic structures andcarrier dynamics in materials. Elastic strain can in principle be applied toachieve reversible and fast control of such properties, but it remains a greatchallenge to create and utilize precisely controlled inhomogeneous deformationin semiconductors. Here, we take a combined experimental and theoreticalapproach to demonstrate that elastic strain-gradient can be createdcontrollably and reversibly in ZnO micro/nanowires. In particular, we show thatthe inhomogeneous strain distribution creates an effective field thatfundamentally alters the dynamics of the neutral excitons. As the basicprinciples behind these results are quite generic and applicable to mostsemiconductors, this work points to a novel route to a wide range ofapplications in electronics, optoelectronics, and photochemistry.

Tailoring exciton dynamics by elastic strain-gradient in semiconductors