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It has been demonstrated that InSb nanoinclusions, which are formed in situ,can simultaneously improve all three individual thermoelectric properties ofthe n-type half Heusler compound (Ti,Zr,Hf)(Co,Ni)Sb [Xie et al., Acta Mater.58, 4795 (2010)]. In the work presented herein, we have adopted the sameapproach to the p-type half Heusler compound Ti(Co,Fe)Sb. The results ofresistivity, Seebeck coefficient, thermal conductivity, and Hall coefficientmeasurements indicate that the combined high mobility electron injection, lowenergy electron filtering, and boundary scattering, again, lead to asimultaneous improvement of all three individual thermoelectric properties:enhanced Seebeck coefficient and electrical conductivity as well as reducedlattice thermal conductivity. A figure of merit of ZT=0.33 was attained at 900K for the sample containing 1 atomic percent InSb nanoinclusions, a 450 percentimprovement over the nanoinclusion-free sample. This represents a rare casethat the same nanostructuring approach successfully works for both p-type andn-type thermoelectric materials of the same class, hence pointing to apromising materials design route for higher performance half-Heusler materialsin the future and hopefully will realize similar improvement in TE devicesbased on such half Heusler alloys.

Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via  a Synergistic High Mobility Electron Injection Energy filtering and Boundary  Scattering Approach