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Investigation of the interfacial electronic properties ofN,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bisdicarboximide(PDI8-CN2) organic semiconductor films grown on silicon dioxide is performed bypolarization-resolved second harmonic generation optical spectroscopy, pointingout a spatial region where charge carriers distribution in the semiconductorlacks inversion symmetry. By developing a model for nonlinear susceptibility inthe framework of Debye-Huckel screening theory, we show that the experimentalfindings can be interpreted as resulting from the presence of a net chargelocalized at the silicon dioxide, accompanied by a non-uniform chargedistribution in the organic semiconductor. Photoluminescence analysis furtherreinforces this scenario. Reduction-oxidation reactions involving PDI8-CN2 andwater molecules are invoked as physical origin of the localized charge. Thework outlines a sensitive tool to probe the total charge localized at buriedsemiconductor/dielectric interfaces in organic thin-film transistors withoutresorting to invasive contact-based analyses.

Contact-free probing of interfacial charging and Debye-like charge screening in SiO$_2$/PDI8-CN$_2$ systems by optical second harmonic generation