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In this work, the effect of size and wetting layer on subband electronicenvelop functions, eigenenergies, linear and nonlinear absorption coefficientsand refractive indices of a dome-shaped InAs/GaAs quantum dot wereinvestigated. In our model, a dome of InAs quantum dot with its wetting layerembedded in a GaAs matrix was considered. A finite height barrier potential atthe InAs/GaAs interface was assumed. To calculate envelop functions andeigenenergies, the effective one electronic band Hamiltonian and electroneffective mass approximation were used. The linear and nonlinear opticalproperties were calculated by the density matrix formalism.

Size-dependent intersubband optical properties of dome-shaped InAs/GaAs quantum dots with wetting layer