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We report that an ultra-thin, post-oxidized aluminum epilayer grown on theAlGaAs surface works as a high-quality tunnel barrier for spin injection from aferromagnetic metal to a semiconductor. One of the key points of the presentoxidation method is the formation of the crystalline AlOx template layerwithout oxidizing the AlGaAs region near the Al/AlGaAs interface. The oxidizedAl layer is not amorphous but show well-defined single crystalline featurereminiscent of the spinel gamma-AlOx phase. A spin-LED consisting of an Felayer, a crystalline AlOx barrier layer, and an AlGaAs-InGaAs doublehetero-structure has exhibited circularly polarized electroluminescence withcircular polarization of P_{EL} = 0.145 at the remnant magnetization state ofthe Fe layer, indicating the relatively high spin injection efficiency (epsilon= 2P_{EL} / P_{Fe}) of 0.63.

Efficient spin injection through a crystalline AlOx tunnel barrier prepared by the oxidation of an ultra-thin Al epitaxial layer on GaAs