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The Kondo insulator SmB6 has long been known to exhibit low temperature (T <10K) transport anomaly and has recently attracted attention as a newtopological insulator candidate. By combining low-temperature and highenergy-momentum resolution of the laser-based ARPES technique, for the firsttime, we probe the surface electronic structure of the anomalous conductivityregime. We observe that the bulk bands exhibit a Kondo gap of 14 meV andidentify in-gap low-lying states within a 4 meV window of the Fermi level onthe (001)-surface of this material. The low-lying states are found to formelectron-like Fermi surface pockets that enclose the X and the Gamma points ofthe surface Brillouin zone. These states disappear as temperature is raisedabove 15K in correspondence with the complete disappearance of the 2Dconductivity channels in SmB6. While the topological nature of the in-gapmetallic states cannot be ascertained without spin (spin-texture) measurementsour bulk and surface measurements carried out in thetransport-anomaly-temperature regime (T < 10K) are consistent with thefirst-principle predicted Fermi surface behavior of a topological Kondoinsulator phase in this material.

Surface electronic structure of a topological Kondo insulator candidate SmB6: insights from high-resolution ARPES