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Recent observations of current-induced magnetization switching atferromagnet/normal-conductor interfaces have important consequences for futuremagnetic memory technology. In one interpretation, the switching originatesfrom carriers with spin-dependent scattering giving rise to a relativisticanti-damping spin-orbit torque (SOT) in structures with broken space-inversionsymmetry. The alternative interpretation combines the relativistic spin Halleffect (SHE), making the normal-conductor an injector of a spin-current, withthe non-relativistic spin-transfer torque (STT) in the ferromagnet. Remarkably,the SHE in these experiments originates from the Berry phase effect in the bandstructure of a clean crystal and the anti-damping STT is also based on adisorder-independent transfer of spin from carriers to magnetization. Here wereport the observation of an anti-damping SOT stemming from an analogous Berryphase effect to the SHE. The SOT alone can therefore induce magnetizationdynamics based on a scattering-independent principle. The ferromagneticsemiconductor (Ga,Mn)As we use has a broken space-inversion symmetry in thecrystal. This allows us to consider a bare ferromagnetic element whicheliminates by design any SHE related contribution to the spin torque. Weprovide an intuitive picture of the Berry phase origin of the anti-damping SOTand a microscopic modeling of measured data.

Observation of a Berry phase anti-damping spin-orbit torque