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We demonstrate a nanopatterning technique for silicon photovoltaics, whichoptically outperforms conventional micron-scale random pyramids, whiledecreasing by a factor of ten the quantity of silicon lost during the texturingprocess. We combine hole-mask colloidal lithography, a bottom-upnanolithography technique, with reactive ion etching to define nanopyramids atthe surface of a silicon wafer. Thanks to the self-organised aspect of thetechnique, the beads are randomly distributed, however keeping a interbeaddistance of the order of their diameter. We tune the nanopattern feature sizeto maximize the absorption in the crystalline silicon by exploiting bothanti-reflection and light trapping. When optimized, the nanopyramids lead to ahigher absorption in the crystalline silicon than the conventional micron-scalerandom pyramids in the visible and near the band edge, with a superiorrobustness to variations of the angle of the incident light. As thenanopatterning technique presented here is simple, we expect that it could bereadily integrated into the crystalline silicon solar cell fabricationprocessing.

Inverted random nanopyramids patterning for crystalline silicon photovoltaics