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The mean free path (MFP) in silicon nanowire field effect transistors limitedby surface roughness scattering (SRS) is calculated with the non-perturbativeapproach utilizing the non-equilibrium Green's function method. The entrancescattering effect associated with finiteness of the channel length isidentified and a method to eliminate it in the calculation of the MFP isdeveloped. The behavior of the MFP with respect to channel length (L), channelwidth (W), and the root-mean-square (RMS) of the surface roughness isinvestigated extensively. Our major findings are that the single parameter,RMS/W, can be used as a good measure for the strength of the SRS effects andthat the overall characteristics of the MFP are determined by the parameter. Inparticular, the MFP exponentially decreases with the increase of RMS/W and theMFP versus the gate electric field shows a distinctively different behaviordepending on whether the strength of the SRS effects measured by RMS/W issmaller or greater than 0.06.

Surface-Roughness-Limited Mean Free Path in Si Nanowire FETs