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We report the successful fabrication of lateral organic spin valves with achannel length in the sub $100\,nm$ regime. The fabication process is based onin-situ shadow evaporation under UHV conditions and therefore yields clean andoxygen-free interfaces between the ferromagnetic metallic electrodes and theorganic semiconductor. The spin valve devices consist of Nickel and Cobalt-ironelectrodes and the high mobility \emph{n}-type organic semiconductor$N,N'$-bis(heptafluorobutyl)-$3,4:9,10$-perylene diimide. Our studies comprisefundamental investigations of the process' and materials' suitability for thefabrication of lateral spin valve devices as well as magnetotransportmeasurements at room temperature. The best devices exhibit a magnetoresistanceof up to $50\,%$, the largest value for room temperature reported so far.

Large room-temperature magnetoresistance in lateral organic spin valves fabricated by in-situ shadow evaporation