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We developed a simple and reliable method for the fabrication of sub-10-nmwide nanogaps. The self-formed nanogap is based on the stoichiometricsolid-state reaction between metal and Si atoms during silicidation process.The nanogap width is deter- mined by the metal layer thickness. Our proposedmethod produces nanogaps either symmetric or asymmetric electrodes, as well as,multiple nanogaps within one unique process step for application to complexcircuits. Therefore, this method provides high throughput and it is suitablefor large-scale production. To demonstrate the feasibil- ity of the proposedfabrication method, nanogap resistive switches have been built andcharacterized. They exhibit a pronounced hysteresis with up to 103 on/offconductance ratios in air. Our results indicate that the voltages for initiallyelectroforming the de- vice to the switch state are determinated by the nanogapsizes. However, the set and reset voltages of the device do not stronglydependent on the nanogap widths. These phenomena could be helpful to understandhow the resistive switching is established.

Self-Formation of Sub-10-nm Nanogaps by Silicidation for Resistive Switch in Air