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We study the thermoelectric properties of Te-doped FeSb2 nanostructuredsamples. Four samples of stoichiometry FeSb1.84Te0.16 were prepared by a hotpress method at temperatures of 200, 400, 500, and 600 oC. Te-doping enhancesthe dimensionless figure of merit (ZT) on FeSb2 via two mechanisms. First, asemiconductor to metal transition is induced, which enhances the value of thepower factor at low-temperatures. Second, the thermal conductivity, which wasalready reduced in nanostructured FeSb2 samples, is further reduced byincreased point defect scattering through the n type substitution of Sb site byTe atom. The combined effect results in a ZT = 0.022 at 100 K, an increase of62% over the ZT value for the optimized Te-doped single crystal sample. Hallcoefficient and electrical resistivity measurements reveal a decreased mobilityand increased concentration of the carriers in the doped sample.

Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring