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In controlled X-ray irradiation experiments, the formation of trap states inthe prototypical van der Waals bonded semiconductor Rubrene is studiedquantitatively for doses up to 82 Gy (Gy = J/kg). About 100 electronic trapstates, located around 0.3 eV above the valence band, are created by eachabsorbed 8 keV photon which is 2-3 orders of magnitude more than 1 MeV protonsproduce. Thermal annealing is shown to reduce these traps. Local structuraldisorder, which has also been induced by other means in different studies, isthus identified as a common origin of trap states in van der Waals bondedmolecular organic semiconductors.

Radiation induced electronic trap states and local structural disorder in van~der~Waals bonded semiconductor crystals