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We investigated the current-voltage characteristic of InAs/GaAs quantum dotintermediate band solar cells (QD IBSCs) with different n-type doping densityin the QD layer. The n-type doping evidently increases the open circuitvoltage, meanwhile decreases the short circuit current density, and leads tothe conversion efficiency approaching that of the control solar cell, that isthe major role of n-type doping is to suppress the effects of QDs on thecurrent-voltage characteristic. Our model adopts practical parameters forsimulation rather than those from detailed balanced method, so that the resultsin our simulation are not overestimated.

Effects of n-type doping in InAs/GaAs quantum dot layer on current-voltage characteristic of intermediate band solar cells