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Cross contaminations are observed on sample surfaces by AES and XPS, ifmultiple samples are mounted on one sample holder and a neighbouring sample wassputter depth profiled. During sputter depth profiling sputtered material isdeposited on inner surfaces of the instrument. In a secondary sputter process,which is due to species leaving the primary sputter target with higher kineticenergy, the previously deposited material is transported from the innersurfaces to the other samples mounted on the sample holder. This ReflectiveSputtering is utilized to deposit ultra-thin layers on sample surfaces for XPSbinding energy referencing purpose and to build up ultra-thin conductive layersto enable AES measurements on insulating samples.

Sputter-Induced Cross-Contaminations in Analytical AES and XPS  Instrumentation: Utilization of the effect for the In-situ Deposition of  Ultrathin Functional Layers