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An original idea of semiconductor defects identification in CCD matrix waspresented in the article. The procedure is simple and easy to execute becauseof no need for special and expensive equipment. The method classifies defectsinto two groups: the point defects and the spatial defects (dislocations).During the experiments it was proven that the type of defect affects thebehaviour of the dark current generation during the light gathering .

Optical identification of crystal defects in CCD matrix