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Microstructured Silicon, which is obtained by irradiating the surface of aSilicon wafer with femtosecond laser pulses under certain circumstances, hasunusual optical properties such as the strong absorption of light withwavelength from 0.25{\mu}m to 17{\mu}m. So it holds great promise in theintermediate band solar cell (IBSC). Some articles have discussed theelectronic structure associating with simple substitutional impurities inSilicon introduced by chalcogenides. And on this basis, after high temperatureannealing treatment, we establish the mode of impurity levels ofmicrostructured Silicon introduced by sulfur and oxygen. Using generalizedstatistics of multi-level,we analyze the probability of electronic in all localenergy levels and the relationship among Fermi level, temperature and thedensity of impurities. Then the theoretical conversion efficiency of thecorresponding IBSC is discussed with the Detailed Balance Theory. And the issueof making high efficiency solar cells based on femtosecond lasermicrostructured Silicon is discussed in detail.

Study on the Fermi level of microstructured Silicon with impurities introduced by chalcogenides and their affect on solar cell efficiency