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Spin-orbit interaction (SOI) in low-dimensional systems results in thefascinating property of spin-momentum locking. In a Rashba system the inversionsymmetry normal to the plane of a two-dimensional (2D) electron gas is broken,generating a Fermi surface spin texture reminiscent of spin vortices ofdifferent radii. This can be exploited in a spin-based field-effect transistor(spin- FET), where the Rashba system forms a 2D channel between ferromagnetic(FM) source and drain electrodes. The electron spin precesses when propagatingthrough the Rashba channel and spin orientations (anti)parallel to the draingive (low) high conductivity. Crucial is the possibility to tune the momentumsplitting, and consequently the precession angle, through an externalparameter. Here we show that this can be achieved in Pb quantum well statesthrough the doping dependence of the Schottky barrier, opening up thepossibility of a terahertz spin-FET.

Tuning of the Rashba effect in Pb quantum well states via a variable Schottky barrier