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Stability and electronic properties of atomic layers of GaN are investigatedin the framework of the van der Waals-density functional theory. We find thatthe ground state of the layered GaN is a planar graphene-like configurationrather than a buckled bulk-like configuration. Application of an externalperpendicular electric field to the layered GaN induces distinctstacking-dependent features of the tunability of the band gap; the band gap ofthe monolayer does not change whereas that of the trilayer GaN is significantlyreduced for the applied field of 0.4 V/ {\AA}. It is suggested that such astacking-dependent tunability of the band gap in the presence of an appliedfield may lead to novel applications of the devices based on the layered GaN.

Stacking and electric field effects on the electronic properties of the layered GaN