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In2S3(1-x)O3x is known from preceding studies to have a bandgap varyingcontinuously as a function of x, the reason why this solid solution ispotentially interesting in the field of photovoltaics. In this work, we presentresults on oxidation of In2S3 by heating in air atmosphere to obtain thedesired material. The oxidation is accompanied by a mass loss due to thesubstitution of S by O atoms that is studied by means of thermogravimetricanalysis. It appears that the temperature region in which the oxidation occursis strongly dependent on the texture of deposited films. As-grown filmsdeposited by chemical bath deposition are subjected to nano-oxidation occurringat lower temperature than oxidation of materials that are characterized by abetter crystallinity and larger crystallite size. X ray diffraction andscanning electron microscopy (including EDX) were used to get information onthe compounds and the texture of films. The main conclusion of the paper opensthe perspective of practical applications for producing layers for solar cells.

Oxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells