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This paper addresses the effect of disorder on the carrier transportmechanism of atomic layer deposited ZnO thin films as has been investigated bytemperature dependent electrical resistivity measurements in the temperaturerange of 4.2K to 300K. Films were grown on (0001) sapphire substrate atdifferent substrate temperatures varying from 150 to 350 C. The defects andstructural disorder in the films were found to be strongly dependent on theirgrowth temperature. The films grown at 150, 300 and 350 C were found to besemiconductor-like in the whole measurement temperature range of resistivitydue to the enhanced disorder in these films. However, a metal to semiconductortransition (MST) at low temperature has been observed in the films grown at 200and 250 C. It was also observed that the film grown at 250 C with higherresidual resistivity, the transition temperature shifted towards the highervalue due to the increased disorder in this film as compared to that grown at200 C. The upturn in resistivity below the transition temperature has been wellexplained by considering quantum corrections to the Boltzmanns conductivitywhich includes the effect of weak localization and coulomb electron-electroninteractions related to the existence of disorder in these films.

Disorder-driven carrier transport in atomic layer deposited ZnO thin films