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Energy loss rates for hot carriers in graphene have been measured usinggraphene produced by epitaxial growth on SiC, exfoliation and chemical vapourdeposition (CVD). It is shown that the temperature dependence of the energyloss rates measured with high-field damped Shubnikov-de Haas oscillations, andthe temperature dependence of the weak localization peak close to zero fieldcorrelate well, with the high-field measurements understating the energy lossrates by $\sim$40% compared to the low-field results. The energy loss rates forall graphene samples follow a universal scaling of $T_{e}^4$ at lowtemperatures and depend weakly on carrier density $\propto$ n$^{-1/2}$ evidencefor enhancement of the energy loss rate due to disorder in CVD samples.

Energy loss rates of hot Dirac fermions in epitaxial, exfoliated and CVD graphene