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Transport properties of multigraphene layers on 6H-SiC substrates fabricatedby thermal graphitization of SiC were studied. The principal result is thatthese structures were shown to contain a nearly perfect graphene layer situatedbetween the SiC substrate and multgraphene layer. It was found that the curvesof magnetoresistance and Shubnikov- de Haas oscillations shown the features,typical for single-layered graphene. The low temperature resistancedemonstrated an increase with temperature increase, which also corresponds to abehavior typical for single-layered graphene (antilocalization). However athigher temperatures the resistance decreased with an increase of temperature,which corresponds to a weak localization. We believe that the observed behaviorcan be explained by a parallel combination of contributions to the conductivityof single-layered graphene and of multigraphene, the latter allowing to escapedamages of the graphene by atmosphere effect.

Low temperature transport properties of multigraphene structures on  6H-SiC obtained by thermal graphitization: evidences of a presence of nearly  perfect graphene layer