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In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA)nanowire MOSFETs with record high on- state and off-state performance have beendemonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW)scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/decand 7mV/V have been demonstrated, indicating excellent interface quality andscalability. Highest ION = 0.63mA/{\mu}m and gm = 1.74mS/{\mu}m have also beenachieved at VDD=0.5V, showing great promise of InGaAs GAA technology for 10nmand beyond high-speed low- power logic applications.

20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec