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The buffer layer has been analysed by combined micro-Raman andmicro-transmission experiments. The epitaxial graphene growth on the (0001) Siface of 6H-SiC substrates was tuned to get a mixed surface at the early stageof graphitization with i) bare SiC, ii) buffer layer and iii) in some localizedareas small monolayers flakes on top of the buffer layer. These unique samplesenabled to measure the Raman spectrum of the buffer layer (close to the Ramanspectrum of a carbon layer with a significant percentage of sp3 bonds) and itscorresponding relative extinction at 514.5 nm. The Raman spectrum of the bufferlayer remains visible after the growth of one monolayer on top but, despite therelatively low absorption coefficient of graphene, the Raman intensity isstrongly reduced (typically divided by 3). The buffer layer background willbias usual evaluations of the domain sizes based on the D/G integratedintensities ratio. Finally, several Raman maps show the excellent thicknessuniformity and crystalline quality of the graphene monolayers and that they aresubjected to a non uniform compressive strain with values comprised between-0.60% and -0.42%.

Raman spectrum and optical extinction of graphene buffer layers on the Si-face of 6H-SiC