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Using metal-ferroelectric junctions as switchable diodes was proposed severaldecades ago. This was shown to actually work in PbZr(1-x)TixO3 (PZT) by Blom etal. [P.W. M. Blom et al., Phys. Rev. Lett. 73, 2107 (1994)], who reportedswitching in the rectification direction and changes of the current of about 2orders of magnitude upon switching the polarization direction of theferroelectric layer. This form of resistive switching enables the read out of aferroelectric memory state at higher speed compared to the capacitive design,without destroying the information in each reading cycle. Recently, Jiang andcoworkers have shown that these Schottky barrier effects are enormous inBiFeO3, giving thousand times more switched charge than found by in PZT [A.Q.Jiang. et al., Adv. Mat. 23, 1277 (2011)]. Here, by performing localconductivity measurements, we attribute this to a large change of the Schottkybarrier height between the as-grown, down-polarized domains and theup-polarized domains. These measurements allow to estimate the relative effectof polarization charges and screening charges on the conduction through theferroelectric.

Resistive switching in ferroelectric BiFeO3 by 1.7 eV change of the Schottky barrier height