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In the present work, cesium iodide (CsI) thin films of different thicknesshave been prepared by thermal evaporation technique. The crystallite size andgrain size of these films are compared by using X-ray diffraction (XRD) profileanalysis as well as by transmission electron microscopy (TEM) counting,respectively. These two methods provide less deviation between crystallite sizeand grain size in the case of thin CsI films of 4 nm, but there iscomparatively large difference in case of thicker CsI films (20 nm, 100 nm and500 nm). It indicates that dislocations are arranged in a configuration whichcauses small orientational difference between two adjacent coherent regions.The size obtained from XRD corresponds to two separate regions, whereas in theTEM micrograph the two regions may seem to correspond one region particularlyin case of thicker films. Other physical parameters such as strain, stress anddeformation energy density are also estimated precisely for the prominent XRDpeaks of thicker CsI films in the range $2\theta = 20^{0}-80^{0}$ by using amodified Williamson-Hall (W-H) analysis assuming uniform deformation model(UDM), uniform deformation stress model (UDSM) and uniform deformation energydensity model (UDEDM).

Structural characterization of as-deposited cesium iodide films studied by X-ray diffraction and transmission electron microscopy techniques