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W. Chr. Germs, K. Guo, R. A. J. Janssen, and M. Kemerink [1] recentlymeasured the temperature and concentration dependent seebeck coefficient inorganic thin film transistor and found the seebeck coefficient increases withcarrier concentration (corresponding to the gate voltage) in the lowtemperature regime. They further concluded that this unusual behavior is due toa transition from hopping transport in static localized states to bandliketransport, occurring at low temperatures. This is obviously in contrast to theprevious theoretical prediction because it is widely accepted that hoppingtransport is more pronounced at low temperature. We will discuss the reason forthis unusual behavior here and suggest that the density of states functionplays an important role in concentration dependent seebeck coefficient.

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