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Atomically thin two-dimensional molybdenum disulfide (MoS2) sheets haveattracted much attention due to their potential for future electronicapplications. They not only present the best planar electrostatic control in adevice, but also lend themselves readily for dielectric engineering. In thiswork, we experimentally investigated the dielectric effect on the Raman andphotoluminescence (PL) spectra of monolayer MoS2 by comparing samples with andwithout HfO2 on top by atomic layer deposition (ALD). Based on considerationsof the thermal, doping, strain and dielectric screening influences, it is foundthat the red shift in the Raman spectrum largely stems from modulation dopingof MoS2 by the ALD HfO2, and the red shift in the PL spectrum is most likelydue to strain imparted on MoS2 by HfO2. Our work also suggests that due to theintricate dependence of band structure of monolayer MoS2 on strain, one must becautious to interpret its Raman and PL spectroscopy.

Raman and Photoluminescence Study of Dielectric and Thermal Effects on Atomically Thin MoS2