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Although we seriously disagree with many of the points raised in the commentby Edmonds et al., we feel that it is valuable and timely, since comparison ofthis comment and our paper serves to underscore an important property of theferromagnetic semiconductor (Ga,Mn)As in thin film form.

Response to the comment of K.W. Edmonds et al. on the article  'Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi  level within the impurity band'