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We probe the local inhomogeneities of the electronic properties of grapheneat the nanoscale using scanning probe microscopy techniques. First, we focus onthe study of the electronic inhomogeneities caused by the graphene-substrateinteraction in graphene samples exfoliated on silicon oxide. We find thatcharged impurities, present in the graphene-substrate interface, perturb thecarrier density significantly and alter the electronic properties of graphene.This finding helps to understand the observed device-to-device variationtypically observed in graphene-based electronic devices. Second, we probe theeffect of chemical modification in the electronic properties of graphene, grownby chemical vapour deposition on nickel. We find that both the chemisorption ofhydrogen and the physisorption of porphyrin molecules strongly depress theconductance at low bias indicating the opening of a bandgap in graphene, pavingthe way towards the chemical engineering of the electronic properties ofgraphene.

Electronic inhomogeneities in graphene: the role of the substrate interaction and chemical doping