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Quantum-dot states in graphene nanoribbons (GNR) were calculated usingdensity-functional theory, considering the effect of the electric field of gateelectrodes. The field is parallel to the GNR plane and was generated by aninhomogeneous charge sheet placed atop the ribbon. Varying the electric fieldallowed to observe the development of the GNR states and the formation oflocalized, quantum-dot-like states in the band gap. The calculation has beenperformed for armchair GNRs and for armchair ribbons with a zigzag section. Forthe armchair GNR a static dielectric constant of {\epsilon} approx. 4 could bedetermined.

Electronic properties of graphene nanoribbons under gate electric fields