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In the past decade, semiconducting carbon nanotube thin films have beenrecognized as contending materials for wide-ranging applications inelectronics, energy, and sensing. In particular, improvements in large-areaflexible electronics have been achieved through independent advances inpost-growth processing to resolve metallic versus semiconducting carbonnanotube heterogeneity, in improved gate dielectrics, and in self-assemblyprocesses. Moreover, controlled tuning of specific device components hasafforded fundamental probes of the trade-offs between materials properties anddevice performance metrics. Nevertheless, carbon nanotube transistorperformance suitable for real-world applications awaits understanding-basedprogress in the integration of independently pioneered device components. Weachieve this here by integrating high-purity semiconducting carbon nanotubefilms with a custom-designed hybrid inorganic-organic gate dielectric. Thissynergistic combination of materials circumvents conventional designtrade-offs, resulting in concurrent advances in several transistor performancemetrics such as transconductance (6.5 {\mu}S/{\mu}m), intrinsic field-effectmobility (147 cm^2/Vs), sub-threshold swing (150 mV/decade), and on/off ratio(5 x 10^5), while also achieving hysteresis-free operation in ambientconditions.

Fundamental Performance Limits of Carbon Nanotube Thin-Film Transistors Achieved Using Hybrid Molecular Dielectrics