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In this paper, we discuss spin transport in topological insulator (TI) anddiluted magnetic semiconductor (DMS) heterogeneous structures. In DMS / FM(Ferromagnetic Metal) heterogeneous structure, the spin injection efficiencychanges according to the electric field and Fermi energy were investigated. Thehigher electric field, the stronger spin injection efficiency, and its velocityof increase gets lower and approaches to the equilibrium state. Additionally,the higher interface conductivity, the weaker spin injection efficiency, andthe transmission due to Fermi energy of spin up and spin down is different fromeach other. In the same structure, the spin injection efficiency changesdepending on the magnetic field, and the spin injection efficiency vibratessensitively according to the magnetic field. In TI / DMS heterogeneousstructure, the spin current changes according to magnetic field wereinvestigated. Here, when the magnetic field is low, the spin currentoscillates, and as the magnetic field increases, the vibration is attenuated.It also decreases with increasing temperature and weakens vibrations. This isdue to the competitive effect of the chiral properties of Dirac typequasiparticles in the topological insulator and the unique properties ofexchange interaction between electrons and ions in DMS. This result allows usto expect the possibility of spintronic devices with high sensitivity tomagnetic field.

Spin Transport in the heterogeneous structure containing Topological Insulator and Diluted Magnetic Semiconductor