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The controlled scaling of diamond defect center based quantum registersrelies on the ability to position NVs with high spatial resolution. Using ionimplantation, shallow (< 10 nm) NVs can be placed with accuracy below 20nm, butgenerally show reduced spin properties compared to bulk NVs. We demonstrate theaugmentation of spin properties for shallow implanted NV centers using anovergrowth technique. An increase of the coherence times up to an order ofmagnitude (T_2 = 250 \mu s) was achieved. Dynamic decoupling of defects spinsachieves ms decoherence times. The study marks a further step towards achievingstrong coupling among defects positioned with nm precision.

Augmenting the spin properties of shallow implanted NV-centers by CVD-overgrowth