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Recent experiments [1] suggest that the ferromagnetism (FM) in GaAs: Mn isdetermined by the impurity band rather than holes in the valence band. Wediscuss here the physical mechanism of FM mediated by the carriers in impurityband, where the Mn d-level play a crucial role. The theory is based on thefirst principle approach.

The Nature of the magnetism-promoting hole state in the prototype magnetic semiconductor GaAs: Mn