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Oxidization of a dilute Si(Ge) alloy is modeled using an original protocolbased on molecular dynamics simulation and rules for the oxygen insertions.These rules, deduced from ab-initio calculations, favor the formation of SiO_2against GeO_2 oxide which leads to segregation of Ge atoms into the alloyduring the oxidization front advance. Ge condensation is then observed close tothe SiO_2/Ge interface due to the strain induced by oxydization in this region.From the analysis of the simulation process, we propose a one-dimensionaldescription of Ge condensation wich perfectly reproduces the evolution of theGe concentration during oxidization of the SiGe alloy.

Ge condensation under SiGe oxidization: from Molecular Dynamics simulation to one-dimensional analytic modeling