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We present a model of electron transport through a random distribution ofinteracting quantum dots embedded in a dielectric matrix to simulate realisticdevices. The method underlying the model depends only on fundamental parametersof the system and it is based on the Transfer Hamiltonian approach. A set ofnon-coherent rate equations can be written and the interaction between thequantum dots and between the quantum dots and the electrodes are introduced bytransition rates and capacitive couplings. A realistic modelization of thecapacitive couplings, the transmission coefficients, the electron/holetunneling currents and the density of states of each quantum dot have beentaken into account. The effects of the local potential are computed within theself-consistent field regime.

A Transfer Hamiltonian model for devices based in quantum dot arrays