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A study of damages caused by gallium focused ion beam (FIB) into III-Vcompounds is presented. Potential damages caused by local heating, ionimplantation, and selective sputtering are presented. Preliminary analysisshows that local heating is negligible. Gallium implantation is shown to occurover areas tens of nanometers thick. Gallium accumulation as well as selectivesputtering during III-V compounds milling is expected. Particularly, for GaAs,this effect leads to gallium segregation and formation of metallic clusters.Microdisk resonators were fabricated using FIB milling with different emissioncurrents to analyze these effects on a device. It is shown that for higheremission current, thus higher implantation doses, the cavity quality factorrapidly decreases due to optical scattering losses induced by implanted galliumatoms.

Induced Optical Losses in Optoelectronic Devices due to Focused Ion Beam Damages