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We experimentally show evidence for the presence of spin accumulation inlocalized states at ferromagnet-silicon interfaces, detected by electricalHanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. Bycontrolling the measurement temperature, we can clearly observe marked changesin the spin-accumulation signals at low temperatures, at which the electrontransport across the interface changes from the direct tunneling to thetwo-step one via the localized states. We discuss in detail the difference inthe spin accumulation between in the Si channel and in the localized states.

Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces